SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve the electrical property of forming a gate insulation layer and a semiconductor film consecutively without the exposure to the air. CONSTITUTION: A gate insulation layer(102) is formed on a gate electrode layer(101). A semiconductor layer(103) is formed on the gate insulation layer. The first and second buffer layers(104a,104b) are formed on the semiconductor layer. A source electrode layer(105a) is formed on the first buffer layer. A drain electrode layer(105b) is formed on the second buffer layer. The first and the second buffer layer comprise a metal oxide, and a first and a second buffer layer have the n type conductivity.