| 摘要 |
<p>Disclosed is a composition for forming an under-resist film, which contains a fullerene derivative. This composition for forming an under-resist film can be applied over a substrate easily, and enables to obtain an under-resist film having excellent dry etching characteristics. Specifically disclosed is a composition for forming an under-resist film, which contains a fullerene derivative represented by the formula (3) below and an organic solvent.[chemical formula 1](3) AA FULLERENE (In the formula, Rrepresents one group selected from the group consisting of a hydrogen atom, an optionally substituted alkyl group, an optionally substituted aryl group and an optionally substituted heterocyclic group; and Rrepresents an optionally substituted alkyl group or an optionally substituted aryl group.)</p> |
