METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND PLASMA PROCESSING APPARATUS

摘要

A plasma processing apparatus (100) introduces microwaves into a chamber (1) by a flat antenna (31) which has a plurality of holes. A material gas, which contains a nitrogen-containing compound and a silicon-containing compound, is introduced into the chamber (1) by using the plasma processing apparatus, and plasma is generated by the microwaves. Then, a silicon nitride film is deposited by the plasma on a surface of a body to be processed. The trap density of the silicon nitride film is controlled by adjusting the conditions of the plasma CVD process.