| 摘要 |
<p>PURPOSE: A non-volatile memory device and a method for fabricating the same are provided to control a threshold voltage by performing junction ion implantation on a semiconductor layer pattern. CONSTITUTION: An insulating layer(205) including a first contact hole is formed on a semiconductor substrate(200). A first contact plug filling a first contact hole is formed. A semiconductor layer pattern(225) extending on the insulating layer is formed and a first active region is vertically expanded to the semiconductor substrate. A first charge storage layer(230) is formed in an exposed surface of the insulating layer and semiconductor layer pattern. A first control gate electrode(235) is formed on a first charge storage layer in an orthogonal direction with the semiconductor layer pattern. A first interlayer insulating film is formed on a first control gate electrode. A second charge storage layer(265) is formed in the exposed surface of a first interlayer insulating film and a second semiconductor layer pattern(260).</p> |
