METHOD FOR CONTROLLING ELECTRON CARRIER CONCENTRATION IN OXIDE SEMICONDUCTOR OR CONDUCTOR BY ULTRA VIOLET RAY TREATMENT

摘要

PURPOSE: A method for controlling electron carrier concentration in an oxide semiconductor or a conductor by ultraviolet ray treatment are provided to form a plurality of point defects controlling the carrier concentration inside a thin film by projecting an ultraviolet on a thin film or a device having thin film therein. CONSTITUTION: An objects requiring for control an electrical property is installed to a vacuum container(S101). Gases inside the vacuum container are discharged to maintain the vacuum container a predetermined degree of vacuum. The ultraviolet ray is projected on the surface of the object in a predetermined degree of vacuum(S103). The electrical characteristic is estimated to check whether the object has a desired property(S104). If the object does not have a desired resistance and carrier concentration, the steps(S101~S103) is performed again.