| 发明名称 |
SEMICONDUCTOR-BASED MAGNETIC MATERIAL |
| 摘要 |
<p>Magnetic material based on at least one magnetic 3d transition metal element and at least one Group IVA semiconductor element, this material being homogeneous and having a Curie temperature (Tc) of 350 K or higher. Method for the production and uses thereof, especially in spintronics.</p> |
| 申请公布号 |
WO2010010250(A1) |
申请公布日期 |
2010.01.28 |
| 申请号 |
WO2009FR00895 |
申请日期 |
2009.07.21 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;POCHET, PASCAL;ARRAS, EMMANUEL |
发明人 |
POCHET, PASCAL;ARRAS, EMMANUEL |
| 分类号 |
H01F10/193;H01F41/20 |
主分类号 |
H01F10/193 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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