| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device that uniformizes a plasma distribution on a substrate without changing the properties of the plasma itself. <P>SOLUTION: The plasma processing device 1 includes a vacuum container 3. A dielectric material 8 is formed on the top surface of the vacuum container 3, and a coil 7 for generating plasma is formed on the dielectric material 8. A holding means 2 holding a substrate 51 is provided inside the vacuum container 3. The holding means 2 includes an adjustment means 4. When performing plasma processing, the coil 7 for plasma generation is activated after the inside of vacuum container 3 is replaced by a gas, and bias voltage potential is applied to the holding means 2. Then the adjustment means 4 is used to adjust the position of the holding means 2 so that the sheath side may be kept to a uniform height 42. By doing such adjustment, the surface of the substrate 51 can be evenly processed without changing the conditions of the plasma 37. <P>COPYRIGHT: (C)2010,JPO&INPIT |
