| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device having a back electrode. SOLUTION: After formation of semiconductor elements on the surface f1 of a silicon substrate (step s01), the backside surface f2 thereof, which is opposite to the element formation surface, is subjected to the following steps in a processing apparatus SP. After deposition of a first metal film M1 over the backside surface f2 of the silicon substrate in a first chamber ch1 (step s03), it is heat treated to form a metal silicide film E1 (step s04). Then, a nickel film E3 is deposited in a third chamber ch3 (step s06), followed by deposition of an oxidation preventing conductor film E4 in a second chamber ch2 (step s07). Heat treatment for alloying the first metal film M1 and the silicon substrate (step s04) is performed at least prior to the deposition of the nickel film E3. The first chamber ch1 has therefore a mechanism for depositing the first metal film M1 and a lamp heating mechanism. COPYRIGHT: (C)2010,JPO&INPIT |
