| 摘要 |
PROBLEM TO BE SOLVED: To improve a sensing margin in a dynamic type semiconductor memory device of a lower voltage side power supply voltage sensing and a voltage direct reference cell writing system. SOLUTION: This dynamic type semiconductor memory device includes: a sense amplifier 101 connected to bit line pair BT, BC to amplify a voltage difference on the bit line pair BT, BC; a precharge circuit 102 for fixing the bit line pair BT, BC to a power supply voltage GND of lower side in response to a first control signal EQP; memory cell capacitances 16, 21 the respective one end of which are connected to the bit line pair BT, BC respectively; and reference cell memories 8, 15 the respective one end of which are connected to the bit line pair BT, BC, respectively. In this case, the other ends 32 of the memory cell capacitances 16, 21 and other ends 33 of the reference cell capacitances 8, 15 are electrically separated. COPYRIGHT: (C)2010,JPO&INPIT
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