发明名称 Techniques for Electrically Characterizing Tunnel Junction Film Stacks with Little or no Processing
摘要 Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the "high" and "low" resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.
申请公布号 US2010023287(A1) 申请公布日期 2010.01.28
申请号 US20090539068 申请日期 2009.08.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 WORLEDGE DANIEL CHRISTOPHER;TROUILLOUD PHILIP LOUIS;ABRAHAM DAVID WILLIAM;SCHMID JOERG DIETRICH
分类号 G06F19/00;G01Q70/00;G01R27/00;G01R31/26;G01R33/09 主分类号 G06F19/00
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