发明名称 |
NON-VOLATILE MEMORY DEVICES AND PROGRAMMING METHODS FOR THE SAME |
摘要 |
The non-volatile memory device includes a plurality of memory cells. Each of the memory cells is configured to achieve one of a plurality of states, and each of the states represents different multi-bit data. In one embodiment, the method of programming includes simultaneously programming (1) a first memory cell from a first selected state to a second selected state and (2) a second memory cell from a third selected state to a refined third selected state. The refined third selected state has a higher verify voltage than the third selected state.
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申请公布号 |
US2010020602(A1) |
申请公布日期 |
2010.01.28 |
申请号 |
US20090493284 |
申请日期 |
2009.06.29 |
申请人 |
BAEK JONG-NAM;HWANG SANGWON |
发明人 |
BAEK JONG-NAM;HWANG SANGWON |
分类号 |
G11C16/04;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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