P-CHANNEL THIN-FILM TRANSISTOR AND PROCESS FOR PRODUCING THE p-CHANNEL THIN-FILM TRANSISTOR

摘要

Disclosed are a p-channel thin-film transistor and process for producing the transistor, which can overcome problems in the past such that a CMOS circuit could not have been prepared with an oxide TFT due to the absence of p-type TFT and a simple AM-OLED drive circuit comprising TFT connected directly to an anode could not have been constructed. The p-channel thin-film transistor is characterized in that a thin film of stannous oxide (SnO) having a total content of Sn4+ and Sn0 (tin metal) of less than 10 atom% is deposited on a substrate of a thin-film transistor to form a channel layer.  In a gas phase method, SnO is used as a target, and a film is formed while regulating the degree of oxidation of Sn deposited on the substrate by utilizing the temperature of the substrate and the partial pressure of oxygen in the atmosphere.