发明名称 COMPOSITION FOR ANTIREFLECTION FILM FORMATION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION
摘要 <p>This invention provides a composition for antireflection film formation, having a predetermined level of pH, which has excellent storage stability and matching properties with a resist film and coatability, and can form an antireflection film having satisfactory optical properties. The composition for an antireflection film formation is a composition for the formation of an antireflection film provided on a resist film. The composition comprises a water-soluble film forming component and a predetermined fluorine compound. In the composition for antireflection film formation, the pH value can easily be regulated without deteriorating coatability by adding a predetermined fluorine compound, and a composition for antireflection film formation, having excellent storage stability and matching properties with a resist film can be provided. Further, since the fluorine compound can also contribute to an improvement in optical properties of the antireflection film, and, thus, a composition for antireflection film formation, which can form an antireflection film having excellent optical properties, can also be provided.</p>
申请公布号 KR20100009580(A) 申请公布日期 2010.01.27
申请号 KR20097025265 申请日期 2008.05.16
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 SAWANO ATSUSHI;KOSHIYAMA JUN;HIROSAKI TAKAKO
分类号 G03F7/11;G03F7/004;H01L21/027 主分类号 G03F7/11
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