PROCESS FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE,申请号EP20060797281-传众专利搜索

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发明名称	PROCESS FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE
摘要
申请公布号	EP1933386(A4)	申请公布日期	2010.01.27
申请号	EP20060797281	申请日期	2006.09.01
申请人	CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY	发明人	MIYANAGI, TOSHIYUKI;TSUCHIDA, HIDEKAZU;KAMATA, ISAHO;NAGANO, MASAHIRO;SUGAWARA, YOSHITAKA;NAKAYAMA, KOJI;ISHII, RYOSUKE
分类号	H01L29/861;H01L21/18;H01L21/329;H01L29/24	主分类号	H01L29/861
代理机构		代理人
主权项
地址

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