| 摘要 |
PURPOSE: A semiconductor device is provided to improve operational reliability by suppressing degradation of performance of an input buffer according to temperature change. CONSTITUTION: A semiconductor device comprises a bias signal generator(10) and a differential amplifying type input buffer part(20). The bias signal generator generates a bias signal having a voltage level corresponding to a temperature sensing signal. The differential amplifying type input buffer part is current-biased in response to the bias signal. The temperature sensing signal is a signal outputted from an internal or external temperature sensing part of a semiconductor device. The voltage level of the bias signal is proportional to temperature. The differential amplifying type input buffer part comprises a bias transistor for supplying sinking currents. |
