| 摘要 |
<p>PURPOSE: A phase change memory device and a method for manufacturing the same are provided to steadily form the amorphous phase of the phase changing film by rapidly transferring the heat from the phase changing film to the heater region by the heat sink. CONSTITUTION: A first insulating layer(104) is formed on the cell region of the silicon substrate and includes a plurality of holes. The cell switching element is formed to be recessed within the hole. A heat sink(130) is formed to be projected on the hole in which the switching element is formed from the first insulating layer. The gate is comprised of the laminating structure of the gate insulating layer, the first gate conductive film, the second gate conductive film and the hard mask film. The second insulating layer is formed on the front side of the silicon substrate in which the heat sink and the gate are formed. The second insulating layer includes the contact hole exposing the heat sink and exposes the hard mask film of the gate. A heater(140) is formed within the contact hole. The phase changing film and the laminate pattern of the upper electrode are formed on the heater.</p> |
