发明名称 |
CHARGE STORAGE NANOSTRUCTURE |
摘要 |
<p>The present invention relates to a nanostructured device for charge storage. In particular the invention relates to a charge storage device that can be used for memory applications. According to the invention the device comprise a first nanowire with a first wrap gate arranged around a portion of its length, and a charge storing terminal connected to one end, and a second nanowire with a second wrap gate arranged around a portion of its length. The charge storing terminal is connected to the second wrap gate, whereby a charge stored on the charge storing terminal can affect a current in the second nanowire. The current can be related to written (charged) or unwritten (no charge) state, and hence a memory function is established.</p> |
申请公布号 |
EP2130229(A1) |
申请公布日期 |
2009.12.09 |
申请号 |
EP20080724281 |
申请日期 |
2008.03.26 |
申请人 |
QUNANO AB |
发明人 |
SAMUELSON, LARS;THELANDER, CLAES |
分类号 |
H01L29/775;G11C11/412;G11C13/02;H01L21/336;H01L27/115;H01L29/06;H01L29/788;H01L29/792 |
主分类号 |
H01L29/775 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|