Insulated gate semiconductor device and method of manufacturing the same

摘要

A semiconductor device in a semiconductor substrate (10) including a first region (12), a source region (20), a second region (14), a drain region (30), a gate insulating layer (60), a field insulating layer (50) and a gate electrode (40). The field insulating layer has, in its portion overlapping the gate electrode, such a step (51) that a portion of the field insulating layer between the step and the gate insulating layer is thinner than the rest of the field insulating layer.