| 摘要 |
PURPOSE: An internal voltage generating circuit of a semiconductor memory device is provided to control a level of internal voltage by quickly releasing the internal voltage in case of external voltage of a high voltage state. CONSTITUTION: An internal voltage generating unit(10) generates internal voltage by comparing levels of internal voltage and reference voltage. A high voltage detection part(400) generates a high voltage detection signal by comparing levels of rated voltage and external voltage. A voltage divider(20) generates distribution voltage by distributing the internal voltage. An internal voltage release part(300) releases the internal voltage by comparing the reference voltage and the distribution voltage. The internal voltage release part releases the internal voltage quickly in a disable state of a sensing signal and an enable state of the high voltage detection signal. The high voltage detection part enables the high voltage detection signal in an external voltage state higher than the level of the rated voltage. |
