发明名称 Semiconductor device and method for manufacturing the same
摘要 <p>An object is to increase resistance against an electrostatic breakdown and to increase resistance to an external stress. Another object is to reduce cost by simplifying the manufacturing process. In a step in which an element formation layer (103) is provided between a first organic resin layer (104) provided with a first conductive film (107) on its surface and a second organic resin layer (108) provided with a second conductive film (111) on its surface to electrically connect the first conductive film (107) and the second conductive film (111) with a contact conductor (106,110) formed in each of the organic resin layers, the contact conductor (106,110) provided in each of the first organic resin layer (104) and the second organic resin layer (108) is manufactured by making paste (105) penetrate before an organic resin is cured and then curing the organic resin layer.</p>
申请公布号 EP2131394(A1) 申请公布日期 2009.12.09
申请号 EP20090161307 申请日期 2009.05.28
申请人 SEMICONDUCTOR ENERGY LABORATORY CO, LTD. 发明人 CHIDA, AKIHIRO;NAGATA, TAKAAKI
分类号 H01L23/60;G06K19/077;H01L23/538;H05K3/40 主分类号 H01L23/60
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