| 摘要 |
<p>The device for insulating electric or electronic elements (16,58) such as interconnection integrated on a semiconductor substrate (12), comprises insulator layers (84,86,90) embedded in the substrate and a set of superimposed strip conductors (60,62,64;66,68,70), in particular three on each side of the elements and extending along them. The height of the set is greater than that of the elements. The insulator layers (84,86) fill trenches (80,82) extending in the substrate perpendicular to its surface and along the elements (16,58) on each side and separating them from another element (18). The superimposed strip conductors are electrically connected by feedthroughs (74,78;76,79). Each feedthrough extends to one or the other extremity of the strip conductors, or several mutually spaced feedthroughs connect the superimposed strip conductors. An electrically conducting layer (91) extends above the elements and connects the top-layer strip conductors (64,70). In a variant of the device, the semiconductor layer embedded in the substrate below the element is of conductivity type opposite to that of the substrate so as to form a p-n junction with the substrate. In a variant of the device, several parallel trenches are transversal to the element, and each trench is filled with an insulator layer. In a variant of the device, a supplementary insulator layer extends in the substrate below the element and insulates a portion of the substrate where the element is formed from the rest of the substrate. In a variant of the device, an electric conductor and an electrically insulating layer where the conductor is formed are isolated by two parallel conductor layers comprising the insulating layer, and crossings connect the two conductor layers. In a variant of the device, the element is a waveguide demarcated by two parallel conductor layers and two crossings.</p> |
