| 摘要 |
PURPOSE: A reading method of a nonvolatile memory device capable of reducing a time for extracting operation is provided to output an LSB bit by outputting the LSB bit previously extracted from MSB bit. CONSTITUTION: A reading method of a nonvolatile memory device capable of reducing a time for extracting operation is as follows. First and second latches are initialized. The threshold voltage of a memory cell resets the data stored in the first latch according to the first read voltage(310). The threshold voltage of the memory cell read data stored in the first latch and the second latch resets(330). The data stored in the second latch is outputted to the outside(340). |
