| 摘要 |
PURPOSE: A resistive memory device and a method for manufacturing the same are provided to form plug type lower electrodes in a lower part of a resistive layer. CONSTITUTION: A resistive memory device includes an insulating layer, the first electrode plug, a resistive layer and the second electrode on a substrate(40). The first electrode plugs penetrate the insulating layer. The resistive layer(43) is located on the insulating layer(41). The resistant layer is connected to the first electrode plugs. The second electrode is located on the resistive layer. The resistive layer is composed of dual oxide materials or materials of perovskite series.
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