LASER WORKING METHOD OF FILM ON ORGANIC RESIN

摘要

PURPOSE:To remove selectively a light transmittable conductive film and a non- single crystal semiconductor and to form channels or openings by forming said conductive film and semiconductor on a thin org. resin film and irradiating pulse laser light thereto. CONSTITUTION:A light transmittable conductive film 2 consisting principally of indium oxide or tin oxide is formed by a sputtering method on a thin org. resin film 1 having an insulating surface and 180 deg.C upper limit temp. for continuous use. A non-single crystal semiconductor 22 consisting principally of silicon is laminated by a plasma vapor phase method atop said film. A YAG laser is then repeatedly and simultaneously irradiated at 6kHz, 1.3W average output, 100 nsec-1musec pulse width and 120cm/min scanning speed. Channels 10, 10' are then obtd. and no damage and partial deterioration are generated at all on the surface of the resin 1.