| 摘要 |
A semiconductor device includes a gate insulating film which is formed on the major surface of a semiconductor substrate, a gate electrode which is formed on the gate insulating film, a first offset-spacer which is formed in contact with one side surface of the gate electrode, a first spacer which is formed in contact with the other side surface of the gate electrode, a second spacer which is formed in contact with the first offset-spacer, and source and drain regions which are formed apart from each other in the major surface of the semiconductor substrate below the first and second spacers so as to sandwich the gate electrode and the first offset-spacer. The source region is formed at a position deeper than the drain region. The dopant concentration of the source region is higher than that of the drain region.
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