| 摘要 |
A semiconductor memory device is provided, which enhances precharging efficiency by supplying bit line free charge voltage through both side surfaces of the imbedded bit line. A bit line(110) is imbedded to the silicon substrate. The cell transistor(130) is formed on the bit line in the vertical direction. The first metal Line(160) is connected to the bit line. The second metal Line(170) is connected to the cell transistor. The first switch is connected to the first metal line and supplies the precharge voltage. The second switch is connected to the second metal line and supplies the precharge voltage. |
