NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT

摘要

A non-volatile memory device using the register is provided, which improves the light performance ability by using the exterior voltage of the high level. A memory cell array(110) comprises a plurality of nonvolatile memory cells. The first voltage generating unit produces the first voltage. The voltage pad receives exterior voltage having the level higher than the first voltage. The sense amplifier receives the first voltage and reads data from the nonvolatile memory cell selected between the memory cell array. The write driver(170) receives the exterior voltage and writes data in the nonvolatile memory cell selected between the memory cell array.