| 摘要 |
PROBLEM TO BE SOLVED: To form a window part in a narrow area after a semiconductor layer constituting a semiconductor light emitting device is formed. SOLUTION: When forming the semiconductor light emitting deice, an etching stopper layer 18 is first formed as an intermediate layer between second clad layers 17 and 19, so as to form a semiconductor layer 21 having an active layer 15 between a first clad layer 13 and the second layers 17 and 19. A first groove 22 reaching the etching stopper layer 18 is formed on an area where the light emitting end face of the semiconductor device formed of the semiconductor layer 21 is formed. Diffusate in a film (not shown in the diagram) including the diffusate formed on the bottom of the first groove 22 is diffused from the bottom of the first groove 22, so as to form a diffused area 25 reaching the first clad layer 13. Then, the film containing the diffusate is removed and a second groove 26 is formed in the diffused area 25 on the bottom of the first groove 22, and the end face of the active layer 15 is exposed over the side face of the second groove 26. COPYRIGHT: (C)2009,JPO&INPIT
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