HARD MASK PATTERN OF SEMICONDUCTOR ELEMENT, AND METHOD OF FORMING THE SAME

摘要

PROBLEM TO BE SOLVED: To form hard mask patterns arrayed closely below resolution of exposure equipment by performing only linear patterning processes vertically and horizontally on a plane. SOLUTION: A method of forming the hard mask pattern of a semiconductor element includes the stages of: forming second hard mask patterns 107a on a semiconductor substrate; forming a third hard mask pattern including a first pattern 115a crossing the second hard mask patterns 107a and a second pattern 115b disposed between the second hard mask patterns 107a; and forming a fourth hard mask pattern 123a between first patterns 115a. COPYRIGHT: (C)2009,JPO&INPIT