发明名称 |
Coupling wire to semiconductor region |
摘要 |
A first device has a surface and includes a micrometer-scale or smaller geometry doped semiconductor region extending along the surface. A second device has a surface opposite the surface of the first device and includes a micrometer-scale or smaller wire extending through the second device to a position in proximity to the surface of the second device. The first and second devices are displaceable between first and second positions relative to each other. The wire is not substantially electrically coupled to the doped semiconductor region in the first position and the wire is substantially electrically coupled to the doped semiconductor region in the second position. A potential applied to the wire affects the conductivity of the doped semiconductor region in the second position.
|
申请公布号 |
US2009152702(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
US20080380974 |
申请日期 |
2008.12.09 |
申请人 |
PICCIOTTO CARL E;HARTWELL PETER GEORGE |
发明人 |
PICCIOTTO CARL E.;HARTWELL PETER GEORGE |
分类号 |
H01L29/94;H01L21/48 |
主分类号 |
H01L29/94 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|