| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which data read-out operation is fast, also data can be read out accurately even when a memory cell array is micronized. <P>SOLUTION: The semiconductor memory device is provided with the memory cell array including a plurality of cell blocks composed of a plurality of memory cells provided corresponding to cross points of word lines and bit lines, and sense amplifiers provided corresponding to the plurality of bit lines and reading data stored in the memory cell or writing data in the memory cell, In the sense amplifier, existing data stored in a first cell block in the memory cell array is copied to the plurality of memory cells included in first and second cell blocks being different from the first cell block, arranged alternately in the extending direction of the word line, also arranged alternately in the extending direction of the bit line, in the sense amplifier, data is output to the outside of the sense amplifier, data is read out from the second cell block or the third cell block. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
