发明名称 |
PATTERN SIZE MEASURING METHOD, AND SCANNING ELECTRON MICROSCOPE |
摘要 |
PROBLEM TO BE SOLVED: To take measurements with high precision and low damage that have been hardly taken so far in a method of measuring a pattern size in an observation area on a sample with an incident electron beam. SOLUTION: The method of measuring the size of the pattern in the observation area from information on the intensity of a reflected electron or secondary electron generated by the incident electron beam scanning of the observation area on the sample is characterized in that one image is created by superposing a plurality of electron microscope images obtained by irradiating a plurality of observation areas on the sample with the electron beam, and the size of the pattern is measured from intensity information on the one image. COPYRIGHT: (C)2009,JPO&INPIT
|
申请公布号 |
JP2009135273(A) |
申请公布日期 |
2009.06.18 |
申请号 |
JP20070310198 |
申请日期 |
2007.11.30 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
HITOMI KEIICHIRO;HAYATA YASUNARI;NAKAYAMA YOSHINORI |
分类号 |
H01L21/66;G01B15/00;G01N23/203;G01N23/225 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|