发明名称 PATTERN SIZE MEASURING METHOD, AND SCANNING ELECTRON MICROSCOPE
摘要 PROBLEM TO BE SOLVED: To take measurements with high precision and low damage that have been hardly taken so far in a method of measuring a pattern size in an observation area on a sample with an incident electron beam. SOLUTION: The method of measuring the size of the pattern in the observation area from information on the intensity of a reflected electron or secondary electron generated by the incident electron beam scanning of the observation area on the sample is characterized in that one image is created by superposing a plurality of electron microscope images obtained by irradiating a plurality of observation areas on the sample with the electron beam, and the size of the pattern is measured from intensity information on the one image. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009135273(A) 申请公布日期 2009.06.18
申请号 JP20070310198 申请日期 2007.11.30
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 HITOMI KEIICHIRO;HAYATA YASUNARI;NAKAYAMA YOSHINORI
分类号 H01L21/66;G01B15/00;G01N23/203;G01N23/225 主分类号 H01L21/66
代理机构 代理人
主权项
地址