| 摘要 |
PROBLEM TO BE SOLVED: To suppress variation in coupling ratio among memory cells in a semiconductor storage device employing a Fin-type structure, and to suppress a leakage current between a plurality of active areas. SOLUTION: A principal surface of a silicon substrate 2 is formed at a uniform height and a top surface of a silicon oxide film 3 is formed at a uniform height. The silicon oxide film 3 is formed by a SIMOX method and an active area Sa is parted into a plurality by an element isolation groove 2g reaching the top surface of the silicon oxide film 3. Therefore, the depth of the element isolation groove 2g and the height of the active area Sa can be adjusted nearly equally among the respective memory cells, and adjacent active areas Sa and Sa are electrically insulated from each other by the silicon oxide film 3. COPYRIGHT: (C)2009,JPO&INPIT
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