| 摘要 |
A method of forming an iso space pattern is provided. In the method, a first material layer is provided, and then a second material layer and a patterned material layer are formed thereon. After that, a first patterned photoresist layer is formed on the patterned material layer to partially cover the patterned material layer and to partially expose the patterned material layer, and the second material layer is then partially removed by using the first patterned photoresist layer and the patterned material layer as a mask. Afterwards, the iso space pattern constituted by the etched second material layer is formed after the first patterned photoresist layer and the patterned material layer are removed. Due to twice photolithography and etching processes, it is likely to form the relatively narrow iso space pattern with use of existing photolithography equipments according to the method.
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