METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve a shoulder margin of a capping pattern by forming an upper part of the capping pattern to cover a gate pattern with a planarized profile. An element isolation film(112) defining an active area is formed in a semiconductor substrate(110). A gate insulating layer, a gate conductive film and a mask film are formed on a semiconductor substrate. The mask pattern having an upper profile of the rounded shape is formed by patterning the mask film. The gate pattern is formed by patterning the gate conductive film and the gate insulating film. The gate pattern is comprised between a gate insulating pattern(114) and a gate electrode(116). The upper part and the sidewall of the gate pattern are covered with the capping pattern. An interlayer insulating film(124) is formed to expose the upper part of the capping pattern. The capping pattern with the planarized upper profile is formed by polishing the interlayer insulating film and the capping pattern.