发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<p>An object of the present invention is to provide a semiconductor device which can obtain the high potential necessary for writing data to a memory, using a small circuit area. In the present invention, by using as input voltage of a booster circuit not the conventionally used output VDD of a regulator circuit 104, but rather an output VDD0 of a rectifier circuit portion 103, which is a higher potential than the VDD, the high potential necessary for writing data to a memory can be obtained with a small circuit area.</p> |
申请公布号 |
EP2070019(A1) |
申请公布日期 |
2009.06.17 |
申请号 |
EP20070829066 |
申请日期 |
2007.09.26 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO, LTD. |
发明人 |
SAITO, TOSHIHIKO;SHIONOIRI, YUTAKA;KATO, KIYOSHI |
分类号 |
G06K19/07;G06K17/00;H01L21/822;H01L27/04 |
主分类号 |
G06K19/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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