| 摘要 |
<p>In an active matrix substrate (100) of the present invention, a gate bus line (105) and a gate electrode (166) extend in the first direction (the x direction). At a contact portion (168) for electrically connecting the gate bus line (105) with the drain regions of a first-conductivity-type transistor section (162) and a second-conductivity-type transistor section (164), the direction of the straight line (L1) of the shortest distance (d1) between one of a plurality of first-conductivity-type drain connecting portions (168c) that is closest to the gate bus line (105) and the gate bus line (105) is inclined with respect to the second direction (the y direction).</p> |
