| 摘要 |
A fuse circuit of a semiconductor memory device is provided to decrease the length of signal routing wiring in order to reduce the total size of the semiconductor memory device. A fuse circuit(101) of a semiconductor memory device is composed of a fuse block(100) and signal routing wiring. The fuse block includes a first to tenth fuse(F11~F20) and a dummy fuse(F_dummy). The first and tenth fuses are cut. The dummy fuse is never cut. The one end of the first and tenth fuses are connected to a first and tenth transistor(tr11~tr20) respectively. The both ends of the dummy fuse are connected to a ground terminal(VSS). A fuse control signal(X) is inputted in the gate of each transistor. The source of the each transistor is connected to the ground terminal. The drain of the each transistor is connected to the each fuse. The signal routing wiring passes through the top of the dummy fuse. |
