| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of patterning a dielectric film which allows patterning and reduces or fully removes a residue after etching paste thermal treatment, by etching the dielectric film having such a thickness not capable of being etched in single etching paste processing through simple processing using the etching paste to form a patterned film. <P>SOLUTION: The method of patterning a dielectric film includes a step of forming a first dielectric film on a silicon substrate, a step of forming a second dielectric film on the first dielectric film, a step of partially exposing the first dielectric film by partially etching the second dielectric film with use of an etching paste, and a step of etching the exposed first dielectric film using an etching solution. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
