| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To restrain the occurrence of spikes, and to improve the conversion efficiency of a cell further. <P>SOLUTION: When a conductive paste 3 to which an aluminum-silicon alloy has been added in advance is used in silicon in a semiconductor substrate 1, a eutectic mixture of aluminum with silicon is not newly formed in heat treatment and, consequently, a local deeply penetrated part is not formed under an electrode 4. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
