| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a semiconductor testing apparatus, capable of reliably determining whether a semiconductor memory is good or bad, and a semiconductor testing method. <P>SOLUTION: A "1" reading test of each cell corresponding to one bit at a step 440a is first performed on a memory cell array 110, and "0" writing of each cell corresponding to one bit at a step 440b and a "0" reading test of each cell corresponding to one bit at a step 440c are executed on the memory cell array. Thus, the time taken from the supply of power to the start of "0" reading test of a reference cell at the step 440c can be significantly shortened. As a result, the defect of a reference bit line 116b due to the disconnection or high resistance of a gate 126g of a reference column switch transistor 126 which is a normally ON transistor, can be screened. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
