DRIVING METHOD OF NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a driving method of a nonvolatile semiconductor memory device and a nonvolatile semiconductor memory device in which efficient write-in, erasing, or holding of data can be performed by electrically controlling electric charges distribution in an electric charge accumulation layer.

SOLUTION: The driving method of nonvolatile semiconductor memory device has a source-drain diffusion layer formed separately at a surface plane of a semiconductor substrate, a lamination insulation film formed on a channel between the source-drain diffusion layer and including the electric charges accumulation layer, and a gate electrode formed on the lamination insulation layer, and varying a memory state of data by injecting electric charges to the electric charges accumulation layer. Electric charges having the same polarity as electric charges to be injected are injected, and further electric charges having a reverse polarity for already injected electric charges are injected.

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