| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a SOI structure for reducing a resistance difference between a substrate and a metal layer. SOLUTION: The semiconductor device comprises the substrate (a lightly-doped substrate 11), an insulating layer (an oxide film 12) formed on the substrate, an active layer 13 formed on the insulating layer, and the metal layer (a metal thin film 15) formed on the backside of the substrate, the substrate and the metal layer having ohmic contact with each other. Since the substrate and the metal layer have ohmic contact with each other, a resistance difference between the substrate and the metal layer is reduced. COPYRIGHT: (C)2009,JPO&INPIT
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