发明名称 Deposition Method and Method for Manufacturing Light Emitting Device
摘要 An object is to provide a deposition method by which a film having a desired shape can be formed with high productivity. Further, a method for manufacturing a light emitting device by which a light emitting device having high definition can be manufactured with high productivity is provided. Specifically, even in the case of using a large-sized substrate, a method for manufacturing a light emitting device having high definition is provided. By using a deposition target substrate and a shadow mask having a smaller area than the deposition target substrate, the deposition target substrate and the shadow mask are aligned with each other, and an evaporation material is deposited on at least part of the deposition target substrate through a plurality of deposition steps. As an evaporation source, a light absorption layer and a supporting substrate having the evaporation material is preferably used.
申请公布号 US2009104721(A1) 申请公布日期 2009.04.23
申请号 US20080254060 申请日期 2008.10.20
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 HIRAKATA YOSHIHARU;YAMAZAKI SHUNPEI
分类号 H01L21/00;B05D5/12 主分类号 H01L21/00
代理机构 代理人
主权项
地址