HIGH VOLTAGE SEMICONDUCTOR DEVICE

摘要

This invention describes implementation of medium/high voltage semiconductor devices with a better voltage-blocking capability versus specific on-resistance trade off. This approach can be implemented in baseline and submicron CMOS without any additional process steps. CMOS semiconductor devices, such as transistors, are known. Typically these 5 devices have only limited applicability in high voltage (HV) due to for instance breakdown of voltage. Many IC (Integrated Circuit) applications require for instance power management units for DC:DC down-or up-conversion of the supply voltage. Typically NMOS and PMOS semiconductor devices, such as transistors, with capability from10 V up 10 to 25 V are required for such applications.