发明名称 VOLATILE MEMORY ELEMENTS WITH BOOSTED OUTPUT VOLTAGES FOR PROGRAMMABLE LOGIC DEVICE INTEGRATED CIRCUITS
摘要 Integrated circuits are provided that have memory elements. The memory elements produce output signals. The integrated circuits may be programmable logic device integrated circuits containing programmable logic including transistors with gates . When loaded with configuration data, the memory elements produce output signals that are applied to the gates of the transistors in the programmable logic device to customize the programmable logic. To ensure that the transistors in the programmable logic are turned on properly, the memory elements are powered with an elevated power supply level during normal device operation. During data loading operations, the power supply level for the memory elements is reduced. Reducing the memory element power supply level during loading increases the write margin for the memory elements .
申请公布号 WO2007061666(A3) 申请公布日期 2009.04.23
申请号 WO2006US44008 申请日期 2006.11.10
申请人 ALTERA CORPORATION;LIU, LIN-SHIH;CHAN, MARK, T. 发明人 LIU, LIN-SHIH;CHAN, MARK, T.
分类号 G06F7/38;G11C5/14;G11C11/00 主分类号 G06F7/38
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