| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of achieving high density and high function by ensuring a correct process margin between a contact and a gate line in a cell array structure. <P>SOLUTION: This semiconductor memory device includes: a first active region being in a horizontal line form, and having an intermediate portion extendedly formed upward; a second active region formed in a horizontal line form under the first active region, and having both side ends extendedly formed downward by being bent, and an intermediate part extendedly formed downward; a first gate line and a second gate line being in a vertical line form, and each formed by straddling the horizontal lines of the first active region and the second active region; a third gate line being in a horizontal line form, and formed by straddling both the extendedly formed sides of the second active region; and multiple contacts formed at the respective ends of the first active region, the respective ends and the bent parts on both sides of the second region, and the first gate line and the second gate line between the first active region and the second active region. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
