| 摘要 |
PROBLEM TO BE SOLVED: To provide an amplifier for charge transfer devices and a solid-state imaging element, capable of preventing the charge detection sensitivity of an amplifier from decreasing, by preventing an impurity diffusion layer from being formed on a semiconductor substrate where a floating diffusion amplifier has been formed. SOLUTION: The amplifier for charge transfer devices comprises a floating diffusion section 22 for accumulating signal charges; and an amplification circuit for outputting a signal, corresponding to the change in the potential of the floating diffusion section 22, and the floating diffusion section 22 is connected to a gate 24 in one transistor which is included in the amplifying circuit via a diffusion-preventing film 34. COPYRIGHT: (C)2009,JPO&INPIT
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