| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor substrate adapted for reduced basal plane dislocations in a silicon carbide epitaxial layer. SOLUTION: Between a silicon carbide epitaxial layer for device fabrication (i.e., a drift layer) and a base substrate formed of a silicon carbide single-crystal wafer, a highly efficient dislocation conversion layer through which any basal plane dislocations in the silicon carbide single-crystal wafer are converted into threading edge dislocations very efficiently when the dislocations propagate into the layer epitaxially grown is provided by epitaxial growth. Assigning to the dislocation conversion layer a donor concentration lower than that of the drift layer, therefore, allows the above conversion of a larger number of basal plane dislocations than the case where the drift layer exists alone. COPYRIGHT: (C)2009,JPO&INPIT |
