| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a high breakdown voltage and can be manufactured inexpensively without increasing the size of a chip, in which a MOSFET and a Schottky diode are packaged on one semiconductor substrate, in comparison with conventional ones. SOLUTION: When incorporating a Schottky junction into a MOSFET, the Schottky junction is positioned at a place distant from a p-body region 6 and a gate electrode 10 of the MOSFET so that the ends of the Schottky junction are surrounded by p-type shallow junctions. The p-type shallow junctions 20 at the ends of the Schottky junction are connected to the p-body region 6 of the MOSFET by a MOS gate so that the p-body region 6 of the MOSFET and the p-type junctions 20 are conductively connected when a negative bias is applied to the gate. Direct contact with a source region is not provided in the p-body region 6 of the MOSFET, and electrical connection with the p-type junctions at the ends of the Schottky junction is provided via the MOSFET. COPYRIGHT: (C)2009,JPO&INPIT |
